MATERIAL DATA
| GLASS COMPOSITION (TYPICAL, % BY WEIGHT) | SODA LIME |
| AI2 O3 | 1.0 -1.9 |
| CaO | 7.-12 |
| FE2 O3 | 0.08 - 0.14 |
| MgO | 1.0 - 4.5 |
| Na2 O + K2 O | 13 -15 |
| SO4 | 0 - 0.3 |
| SiO2 | 70-73 |
CHEMICAL RESISTANCE (TYPICAL)
| SODA LIME | |
| Alkali attack DINISO695/DIN52322 | 1 |
| Acid resistance DIN12116 | 3 |
| Hydrolytic resistance ISO709/DIN12111 | 3 |
PHYSICAL PROPERTIES (TYPICAL)
| SODA LIME | ||
| Density | 103 kg/m3 | 2.498 |
| Young’s Modulus | 103 kg/mm2 | 7.5 |
| Poisson Ratio | 0.22 | |
| Vickers Hardness | 103 kg/mm2 | 0.63 |
| Shear Modulus | 103 kg/mm2 | |
| Thermal Expansion | 10–6 /K | 8.5 – 9.0 |
| at °C | 20 – 350 | |
| Specific Heat | Cal/g°C | 0.18 |
| at °C | 0 – 50 | |
| Thermal Conduct | Kcal/m h °C | 0.65 |
| Strain Point | °C | 523 |
| Softening Point | °C | 525 - 555 |
| Annealing Point | °C | 720 – 740 |
| Transmittance | % | ≥ 90 |
| Refractive Index | 1.517 |
ELECTRICAL PROPERTIES (TYPICAL)
| SODA LIME | |
| Volume resistivity / log Ω cm | |
| At 20 °C | 13.5 |
| At 50 °C | 12 |
| At 100 °C | 10 |
| At 200 °C | 7.3 |
| At 300 °C | 5.6 |
| Dielectric constant | 7.6 (at 1 kHz) |
| Dielectric loss (tan Ø) | 0.02 (at 1 kHz) |
BARRIER COATING - SiO2
| Properties | |
| Thickness (specified) | nm ≥ 20λ |
| Thickness (typical) | nm 23 |
| Barrier efficiency (Na ion diffusion) | μg/cm2 ≤ 0.1 |
| Transmittance at l = 550nm | % ≥ 89 |
| Refractive index at l = 632.8nm typical | 1.5 |
| Chemical resistance in HF | nm/min ≤ 20 (linear part) |
| Chemical resistance in HF for VIS V | nm/min ≤ 25 (linear part) |
| Adhesive tape test | ok |
| Rubber test | ok |
ETCHING
| The coating will be removed completely when placed in an unagitated solution with the constituents and temperature as specified below. Sufficient deionized water rinsing after etching is essential. | |
| Fully oxidized ITO | |
| HGI Etchant | |
| Hydrochloric acid con c. > 32% Vol % | 48.1 |
| Nitric acid con c. 65 % Vol % | 3.8 |
| Deionized water Vol % | 48.1 |
| Temperature ° C | 45± 1 |
| Etch time | Sec/nm ITO thickness ≤ 3.5 |
| HBr Etchant | |
| Hydrobromic acid con c. 48% | Vol % 100 |
| Temperature ° C | 45± 1 |
| Etch time | Sec/nm ITO thickness ≤ 1 |
| Partially oxidized ITO | |
| HCI Etchant | |
| Hydrochloric acid con c. > 32% | Vol % 14.5 |
| Nitric acid con c. 65 % | Vol % 0.5 |
| Deionized water | Vol % 85.0 |
| Temperature | ° C 25± 2 |
| Etch time | Sec/nm ITO thickness ≤ 0.5 |
Oxidation: Recommended oxidation of partially oxidized ITO in circulated air oven with ambient air 390°C / 30 min
TRANSPARENT CONDUCTIVE COATING – FULLY OXIDIZED ITO
| Common Properties | |
| Etchability in HCI | Nm/sec ≥ 0.3 (linear part) |
| Etchability in HBr | Nm/sec ≥ 1.0 (linear part) |
| Refractive index at = 632.8nm typical | 1.85 |
| Chemical resistance in NaOH | |
| - change of sheet resistance | % ≤ 10 |
| - change of appearance | none |
| Temperature stability (change of sheet resistance)After cycle at 300 °C, 30 min. | % ≤ 250 |
| Humidity stability – change of sheet resistance | % ≤ 10 |
| Adhesive tape test | Ok |
| Rubber test | Ok |
WHILE EVERY ATTEMPT HAS BEEN MADE TO VERIFY THE SOURCE OF THE INFORMATION, NO RESPONSIBILITY IS ACCEPTED FOR ACCURACY OF DATA.
